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Microstructural Characterization of Ferroelectric Thin Films for Non-Volatile Memory Applications

Published online by Cambridge University Press:  16 February 2011

Sharon A. Myers  and
Leo N. Chapin
Sharon A. Myers
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
Leo N. Chapin
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
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Abstract

Ferroelectric thin films are now being used in conjunction with semiconductor CMOS technology to produce non-volatile IC memory devices. Three film compositions across the lead-zirconate-titanate (PZT) phase diagram were examined by transmission electron microscopy (TEM). The films are produced using organo-metallic sol-gels and sintered using standard semiconductor processing techniques. The grain structure of these thin films differ greatly from bulk ceramic crystals and thin films prepared using other deposition techniques. For two compositions, Pb1.1 (Zr0.75Ti0. 25)O3 and Pb1.1 (Zr0.50Ti0.50)O3, the perovskite structure was found in large rosettes surrounded by the polycrystalline pyrochlore phase. In the Pb1.1(Zr0.25Ti0.75)O3 sample, perovskite grains were found with no evidence of the pyrochlore phase. Ferroelectric domains were imaged in all three samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 231
Copyright
Copyright © Materials Research Society 1990

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References

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