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Microstructure and Optical Properties of Aluminum Nitride Thin Films

Published online by Cambridge University Press:  15 February 2011

Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Shigekazu Hirayama
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yuusaku Naota
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

Polycrystalline aluminum nitride (AIN) thin films have been synthesized by ion-beam assisted deposition method and the effect of ion beam energy on the film structure and optical properties has been studied. The kinetic energy of nitrogen ion beam was varied from 0.05 to 1.5 keV under the constant current density. Microstructure of films was examined by thin film X ray diffraction (TFXRD) and optical transmission spectrum from 220 to 2200 nm was measured by UV-visible spectrometer. The TFXRD studies show that the (00*02) plane of hexagonal AIN grows preferentially with the ion beam energy of 0.05 keV and the intensity of the (10*0) and (10*1) planes becomes strong with increasing the ion beam energy. The optical measurements reveal that the wavy structures due to the interference effect are observed in the transmission spectra and the wavy pattern decreases with increasing the ion beam energy, resulting in the decrease of refractive index.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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