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Microstructure Effects in Amorphous and Microcrystalline Ge:H Films

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer ,
Florian Einsele ,
Michio Kondo ,
Takuya Matsui  and
Frank Pennartz
Wolfhard Beyer
Affiliation:
w.beyer@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany, 492461613925, 492461613735
Florian Einsele
Affiliation:
f.einsele@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Jülich, Germany
Michio Kondo
Affiliation:
michio.kondo@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
Takuya Matsui
Affiliation:
t-matsui@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
Frank Pennartz
Affiliation:
f.pennartz@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Jülich, Germany
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Abstract

The characterization of void-related microstructure in amorphous and microcrystalline Ge:H films is reported. Various methods are applied including effusion measurements of hydrogen and of implanted helium and neon, measurements of the infrared absorption of C-H bonds due to in-diffusion of contaminants and of the stretching modes of bonded hydrogen. Several microstructure effects like interconnected voids and isolated voids and a quite different material homogeneity are detected and are found to depend on the preparation conditions. Amorphous Ge:H can be prepared with a (largely) homogeneous structure while microcrystalline Ge:H tends to consist of compact grains surrounded by more or less open voids. Enhanced substrate temperatures (Ts ≈ 250°C) favour the growth of more compact material.

Keywords

Gemicrostructureplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A04-04
Copyright
Copyright © Materials Research Society 2010

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