Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-19T06:25:05.042Z Has data issue: false hasContentIssue false
  • English
  • Français

The Microstructure of SrBi2Ta2O9 Films

Published online by Cambridge University Press:  10 February 2011

C.D. Gutleben ,
Y. Ikeda ,
C. Isobe ,
A. Machida ,
T. Ami ,
K. Hironaka  and
E. Morita
C.D. Gutleben
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
Y. Ikeda
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
C. Isobe
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
A. Machida
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
T. Ami
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
K. Hironaka
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
E. Morita
Affiliation:
Sony Corporation Research Center, Yokohama, Japan.
Get access

Abstract

We present the results of an investigation of the microstructural properties of layered-structure perovskite SrBi2Ta2O9 films grown by Flash-MOCVD, conventional CVD, and MOD. The films grown by Flash-MOCVD on Pt electrode layers, were polycrystalline and showed acceptable ferroelectric properties and low leakage. TEM showed that the individual crystallites were of high quality and, on average about 300nm in diameter. TEM also gave some indications of a disordered phase interspersed amongst the crystallites.

A complete, high-resolution set of XPS spectra gathered from these films confirmed that the basic perovskite structures were predominately single phased but that they were, in all cases, accompanied by a significant amount of mobil clusters of Bi metal. We speculate that this Bi metal corresponds to the disordered phase seen by TEM and show that appropriate ozone annealing is able to remove all evidence of it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 201
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dilip Vijay, P., Desu, Seshu B., Nagata, Masaya, Zhang, Xubai and Chen, Tze C., Ferroelectric Thin Films IV, edited by Tuttle, Bruce A., Desu, Seshu B., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Proc. 361, Pittsburgh, PA 1995) pp. 3–13; Kazushi Amanuma, Takashi Hase, and Yoichi Miyasaka, ibid, pp. 21–25.Google Scholar
2. Mihara, T., Yoshimori, H., Watanabe, H., Itoh, T., Araujo, C. Paz de, McMillan, L.D., Proc. of 7th Int. Symp. Integrated Ferroelectrics,Colorado Springs (1995) p. 108.Google Scholar
3. Desu, Seshu B. and Kwok, Chi K. in Ferroelectric Thin Films, edited by Myers, E.R. and Kingon, A.I. (Mater. Res. Soc. Proc. 200, Pittsburgh, PA 1990), p. 267–274.Google Scholar
4. Ami, T., Hironaka, K., Isobe, C., Nagel, N., Sugiyama, M., Ikeda, Y., Watanabe, K., Machida, A., Miura, K. and Tanaka, M., these proceedings.Google Scholar
5. Watanabe, H., Araujo, C.A. Paz De, Yoshimori, H., Scott, M.C., Mihara, T., Cuchiaro, J.D., and McMillan, L.D. U.S. Patent No. 5, 434,102 (J 8 July 1995).Google Scholar
6. Jona, Franco and Shirane, G., Ferroelectric Crystals, Pergamon, New York, 1962, pp 186.Google Scholar
7. Menzel, D., in Photoemission and the Electronic Properties of Surfaces, edited by Feurerbacher, B., Fitton, B., and Willis, R.F. (John Wiley & Sons, New York, 1978), p. 383.Google Scholar
8. Ludeke, R., Taleb-Ibrahimi, A., Feenstra, R.M., and McLean, A.B., J. Vac. Soc. Technol. B 7(4), 936 (1989).Google Scholar
9. Miyano, K.E., Kendelewicz, T., Cao, R., Spindt, C.J., Lindau, I., and Spicer, W.E., Phys. Rev. B42, 3017 (1990)Google Scholar