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Microstructures of The Electron-Beam Evaporated InSb Thin Films

Published online by Cambridge University Press:  21 February 2011

D.J. Cheng ,
S. Yeh  and
G.F. Chi
D.J. Cheng
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195-5, Chung-hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
S. Yeh
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195-5, Chung-hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
G.F. Chi
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195-5, Chung-hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
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Abstract

Polycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.

After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.

The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 135: Symposium M – Solid State Ionics I , 1988 , 477
Copyright
Copyright © Materials Research Society 1989

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