Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T09:31:24.475Z Has data issue: false hasContentIssue false
  • English
  • Français

MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates

Published online by Cambridge University Press:  10 February 2011

O. M. Kryliouk ,
T. W. Dann ,
T. J. Anderson ,
H. P. Maruska ,
L. D. Zhu ,
J. T. Daly ,
M. Lin ,
P. Norris ,
H. T. Chai  and
D. W. Kisker
...Show all authors
O. M. Kryliouk
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
T. W. Dann
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
T. J. Anderson
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
H. P. Maruska
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
L. D. Zhu
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
J. T. Daly
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
M. Lin
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
P. Norris
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
H. T. Chai
Affiliation:
Crystal Photonics Inc., 2615 Westminster Ter., Oviedo, FL 32765
D. W. Kisker
Affiliation:
IBM Research Division, PO Box 218, Yorktown Heights, NY 10598
J. H. Li
Affiliation:
Department of Materials Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

The use of the nearly lattice-matched oxide substrates LiGaO2 and LiAlO2 has been explored for growth of GaN by MOCVD. As compared to the quality of films grown on sapphire, only growth on LiGaO2 yielded good quality films, and required use of nitrogen as the carrier gas. Furthermore, high structural quality films were grown on LiGaO2 at temperatures as low as 850°C. Dislocation densities estimated from cross-sectional TEM micrographs were found to be as low as 107 cm-2 . HRTEM studies revealed deformations at the surface of the LiGaO2 adjacent to deposited GaN films, indicating possible interracial reactions which may affect the film properties. The GaN film orientations corresponded directly to the substrate orientation, viz., ({0001}/{001} and {1102}/{101}).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 123
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Svederlov, B. and Burns, M., J. Appl. Phys., 76 1394 (1994).Google Scholar
2. Strite, S. and Morkoc, H, J. Vac. Sci. Technol., B10, 1237 (1992).Google Scholar
3. Davis, R.F., J. Vac. Sci. Technol., A11, 829 (1992).Google Scholar
4. Davis, R.F., Proc. Of the IEEE, 79, 702 (1991).Google Scholar
5. Nichia America Corporation, 1066 New Holland Avenue, Lancaster, PA 17601: catalogGoogle Scholar
6. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, S., Japan. J. Appl Phys., 35, L74 (1996).Google Scholar
7. Wu, Y.F., Keller, B.P., Keller, S., Kapolnik, D., Kozodoy, P., Denpa, S.P., and Mishra, U.K., Appl. Phys. Lett., 69, 1438 (Sept. 1996).Google Scholar
8. Qian, W., Skowronski, M., and Graef, M. De, Appl.Phys. Lett., 66, 1252 (March 1995).Google Scholar
9. Bour, David, Xerox Palo Alto Research Center, unpublished results.Google Scholar
10. Marezio, M., Acta Cryst, 18, 481 (1965).Google Scholar
11. Kung, P., Saxler, A., Zhang, X., Walker, D., Lavado, R., and Razeghi, M., Appl. Phys. Lett., 69, 2116 1996).Google Scholar
12. Chai, Bruce H.T., ‘Wurzite Structure Oxide Substrates for GaN Thin Film Growth’, J. Appl. Phys Lett., to be published.Google Scholar
13. Gassman, A., Suzuki, T., Newman, N., Kisielowski, C., Jones, E., and Weber, E. R., J Appl. Phys., 80, 2195 (1996).Google Scholar