Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-15T16:52:22.605Z Has data issue: false hasContentIssue false
  • English
  • Français

A Model for the Frequency Dependence of Charge Pumping Current in Polycrystalline Silicon Thin Film Transistor

Published online by Cambridge University Press:  26 February 2011

Ga-Won Lee ,
Jung-Yeal Lee ,
Deuk-Sung Choi ,
Sung-Hoi Hur ,
Choong-Ki Kim  and
Chul-Hi Han
Ga-Won Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Jung-Yeal Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Deuk-Sung Choi
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Sung-Hoi Hur
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Choong-Ki Kim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Chul-Hi Han
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Get access

Abstract

Making a comparative study between MOSFET and polycrystalline silicon thin film transistor(poly-Si TFT) in applying the charge pumping method(CPM), the most distinctive difference was found in the relation of the charge pumping current(Icp) versus the gate pulse frequency. According to the conventional theory, Icp increases linearly with the gate pulse frequency. In poly-Si TFT, however, Icp shows complicated dependence on frequency. We modeled the frequency dependence of Icp in poly-Si TFT by considering the resistance of active poly-Si film. According to this model we can extract the parameters such as grain boundary trap density, substrate resistance, and capture cross section.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 761
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morozumi, S., Japan Display Sym. Tech. Dig. 148 (1989).Google Scholar
2. Sasaki, K. et.al., Dig.Tech.papers of 1989 IEEE Int. Solid-State Circuits, 34.Google Scholar
3. Levinson, J. et.al., J. Appl. Phys. 53 (2), 1193 (1982).Google Scholar
4. Koyanagi, M. et.al., IEDM Dig. 863 (1990).Google Scholar
5. Koyanagi, M. et. al., IEEE Electron Device Letters, 13, 152 (1992).Google Scholar
6. Brugler, J. S. and Jesper, P. G. A., IEEE Trans. Electron Devices, ED–16, 297 (1969).Google Scholar
7. Seto, John Y.W., J. Appl. Phys. 46, 5247 (1975).Google Scholar
8. De Graff, H. C, Huybers, M. and De Groot, J. G., Solide State Electron. 25, 67 (1982).Google Scholar
9. Wachnik, R. A. and Loweny, J. R., Solid State Electron. 29, 447 (1986).Google Scholar
10. Hirae, S., Hirose, M. and Osaka, Y., J. Appl. Phys. 51, 1043 (1980).Google Scholar