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Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

Published online by Cambridge University Press:  21 March 2011

You-Sang Lee ,
Min-Koo Han  and
Yearn-Ik Choi
You-Sang Lee
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-Dong Kwanak-Ku, Seoul 151-742, KoreaTel: +82-2-880-7254, Fax: +82-2-873-9953, E-mail:lys9229@snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-Dong Kwanak-Ku, Seoul 151-742, KoreaTel: +82-2-880-7254, Fax: +82-2-873-9953, E-mail:lys9229@snu.ac.kr
Yearn-Ik Choi
Affiliation:
Dep. of Molecular Science and Technology, Ajou Univ., Wonchun-Dong, Suwon 442-749, Korea, E-mail: yearnik@madang.ajou.ac.kr
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Abstract

The breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E10.10
Copyright
Copyright © Materials Research Society 2001

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References

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