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Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Alok Nandini ,
U. Roy ,
A. Mallikarjunan ,
A. Kumar ,
J. Fortin ,
G.S. Shekhawat ,
Robert Geer ,
Katherine Dovidenko ,
Eric Lifshin  and
H. Bakhru
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Alok Nandini
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
U. Roy
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
A. Mallikarjunan
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
A. Kumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
J. Fortin
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
G.S. Shekhawat
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Robert Geer
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Katherine Dovidenko
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Eric Lifshin
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
H. Bakhru
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
T.M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.19
Copyright
Copyright © Materials Research Society 2002

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