Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-30T04:36:48.536Z Has data issue: false hasContentIssue false
  • English
  • Français

MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

Published online by Cambridge University Press:  28 February 2011

S.M. PROKES  and
F. SPAEPEN
S.M. PROKES
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA
F. SPAEPEN
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA
Get access

Abstract

Compositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 383
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Elliman, R.G., Gibson, J.M., Jacobson, D.C., Poate, J.M., and J,S. Williams, Appl. Phys. Lett. 46, 478 (1985).CrossRefGoogle Scholar
2. Prokes, S.M. and Spaepen, F., Appl. Phys. Lett. 47, 234 (1985),Google Scholar
3. Janot, C., Roth, M., Marchal, G., M, Piecuch, and Bruson, A., Non-Cryst. Solids, to be published.Google Scholar
4. Spaepen, F., Greer, A.L., Kelton, K.F., and Bell, J.L., Rev. Sci. Instrum. 57 (7), July 1985.Google Scholar
5. Chen, H.S. and Turnbull, D., J. Appl. Phys. 40, 4214 (1969).Google Scholar
6. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985).Google Scholar
7. Greer, A.L., Lin, C.-J., and Spaepen, F., Proceedings of the 4th International Conference on Rapidly Quenched Metals,” Masumoto, T. and Suzuki, K., eds. (Japan Institute of Metals, Sendai, 1982)) p, 567,Google Scholar
8. Cook, H.E. and Hilliard, J.E., J. Appl. Phys. 40, 2191 (1969).CrossRefGoogle Scholar
9. Cahn, J.W. and Hilliard, J.E., J. Chem. Phys. 28, 258 (1958).Google Scholar
10. Greer, A.L. and Spaepen, F., “Synthetic Modulated Structure Materials,” in: Treatise on Materials Science and Technology, Chang, L. and BC. Giessen, eds. (Academic Press, New York, 1985).Google Scholar
11. Cammarata, R.C. and Greer, A.L., J. Non-Cryst. Solids 61/62, 889 (1984).Google Scholar
12. Brown, A.M. and Ashby, M.F., Acta Metall. 28, 1085 (1980).Google Scholar
13. Frank, W., U. G6sele, Mehrer, H., and Seeger, A., in: Diffusion in Crystalline Solids, Murch, G.E. and Nowick, A.S., eds. (Academic Press, New York, 1984).Google Scholar
14. Spaepen, F., in: Layered Structures, Epitaxy, and Interfaces, J,M. Gibson and Dawson, L.R., eds., MRS Symposia Proceedings, vol. 37, 1985.Google Scholar
15. Stephenson, G.B., J. Non-Cryst. Solids 66, 393 (1984).Google Scholar
16. Lewis, A.J., Phys. Rev. B13, 787 (1976),CrossRefGoogle Scholar
17.G.A.N. Connell and Pawlik, J.R., Phys. Rev. B14, 658 (1976).Google Scholar