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Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

Published online by Cambridge University Press:  25 February 2011

N. Magnea ,
F. Dal'bo ,
J. L. Pautrat ,
A. Million ,
L. Di Cioccio  and
G. Feuillet
N. Magnea
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Département de Recherche Fondamentale
F. Dal'bo
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Département de Recherche Fondamentale
J. L. Pautrat
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Département de Recherche Fondamentale
A. Million
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Laboratoire d'Electronique et ce Technologie de l'informatique
L. Di Cioccio
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Laboratoire d'Electronique et ce Technologie de l'informatique
G. Feuillet
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. 85 X -38041 Grenoble Cédex. France Département de Recherche Fondamentale
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Abstract

CD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 455
Copyright
Copyright © Materials Research Society 1987

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References

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