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Molecular Dynamics Studies of Impurity Segregation and Trapping.

Published online by Cambridge University Press:  21 February 2011

G. H. Gilmer ,
Christopher Roland  and
R. P. U. Karunasiri
G. H. Gilmer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Christopher Roland
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. P. U. Karunasiri
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The ability to make highly doped δ-layers in semiconductors depends on the rate of interchange of atoms between layers at the crystal surface. We have simulated molecular beam epitaxy on a silicon (100) surface covered with a monolayer of impurity atoms. The kinetics of impurity segregation to the surface was examined for various growth conditions and segregation energies. We find that segregation is facilitated by appreciable inter-layer diffusion of atoms in the top several layers. The amount of diffusion is much greater during deposition than it is when the beam is off.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

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References

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