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Molecular Grafting on Si(111) Surfaces: An Electrochemical Approach

Published online by Cambridge University Press:  10 February 2011

C. Henry de Villeneuve
Affiliation:
Laboratoire de Physique des Liquides et Électrochimie, CNRS - UPR 15, ESPCI, 10 rue Vauquelin, F-75005 Paris (France)
J. Pinson
Affiliation:
Laboratoire d'Électrochimie Moléculaire, CNRS - URA 438, Univertsité Paris 7, 2 Place Jussieu, F-75005 Paris (France)
F. Ozanam
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS - UR 1254, École Polytechnique, F-91128 Palaiseau (France)
J. N. Chazalviel
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS - UR 1254, École Polytechnique, F-91128 Palaiseau (France)
P. Allongue*
Affiliation:
Laboratoire de Physique des Liquides et Électrochimie, CNRS - UPR 15, ESPCI, 10 rue Vauquelin, F-75005 Paris (France)
*
* corresponding author: e-mail pa@ccr.jussieu.fr
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Abstract

This works addresses the question of the direct attachment of organic molecules on Si(111) by an electrochemical method. Anodic grafting of -OR group is demonstrated by in-situ STM and the LDOS characterized. The grafting of aryl groups, by reduction of aryl diazonium salts in aqueous solution, is also described. This approach leads to well ordered and close-packed thin molecular films with various functionality. Different chemical and structural characterizations conclude to a Si-C binding, between the Si surface and aryl groups. The stability of films is also investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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