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Monocrystal Dislocationless Si :Ge, Grown from The Melt With Gd Impurity.

Published online by Cambridge University Press:  21 February 2011

Borschensky V.V. ,
Brinkevich D.I. ,
Petrov V.V.  and
Prosolovch V.S.
Borschensky V.V.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Brinkevich D.I.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Petrov V.V.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Prosolovch V.S.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
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Abstract

The properties of Si grown from the melt having impurities of germanium and gadolinium have been studied by IR-absorption and Hall effect methods.It was stated that Ge and Gd are effective getters for technological impurities of oxygen and carbon in silicon melt. It has been shown that the combined doping by rare earth and isovalent impurities allows to increase the thermostability of dislocationless monocrystals of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 73
Copyright
Copyright © Materials Research Society 1993

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References

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