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MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP

Published online by Cambridge University Press:  10 February 2011

Goshi Biwa ,
Hiroyuki Yaguchi ,
Kentaro Onabe  and
Yasuhiro Shiraki
Goshi Biwa
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113Japan, onabe@photonics. rcaste.u-tokyo.ac.jp
Hiroyuki Yaguchi
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113Japan, onabe@photonics. rcaste.u-tokyo.ac.jp
Kentaro Onabe
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113Japan, onabe@photonics. rcaste.u-tokyo.ac.jp
Yasuhiro Shiraki
Affiliation:
Reasearch center for advanced science and Technology(RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153 Japan
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Abstract

GaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cross-hatches, a much narrower x-ray diffraction linewidth, and a significantly higher photoluminescence(PL) intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 173
Copyright
Copyright © Materials Research Society 1998

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