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Multi-Wafer VPE Growth of Highly Uniform SiC Epitaxial Layers

Published online by Cambridge University Press:  10 February 2011

M. J. O'Loughlin ,
H. D. Nordby Jr.  and
A. A. Burk Jr/
M. J. O'Loughlin
Affiliation:
Advanced Technology Laboratories, Northrop Grumman ES3, PO Box 1521 Baltimore, MID 21203, michaelhjoloughlin@md.northgrum.com
H. D. Nordby Jr.
Affiliation:
Advanced Technology Laboratories, Northrop Grumman ES3, PO Box 1521 Baltimore, MID 21203, michaelhjoloughlin@md.northgrum.com
A. A. Burk Jr/
Affiliation:
current address, Cree Research, Durham, NC
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Abstract

A multi-wafer silicon carbide vapor phase epitaxy reactor is employed that features full planetary motion and is capable of high quality epitaxy on seven, two-inch diameter substrates. We are currently performing preproduction growths of static induction transistor (SIT) and metal semiconductor field effect transistor (MESFET) active layers. On a 2-inch diameter substrate, layer uniformity is typically ±5% (standard deviation/mean) for both dopant concentration and layer thickness (for 1 3/8-inch substrates, layer uniformity is around ±3%). For the seven wafers within a run, interwafer uniformity has been dramatically improved to approximately ±8% for dopant concentration and ±3% for layer thickness. Process control charts will be presented which exhibit that interrun (run-to-run) variation in both thickness and doping can be kept within ±10% of the desired values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 161
Copyright
Copyright © Materials Research Society 1999

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References

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