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Multi-Wavelength Ellipsometry for Effective Characterization of Thin Epitaxial Si1−xGex Layers on Silicon Substrate

Published online by Cambridge University Press:  25 February 2011

Michael Eichler ,
Marita Weidner  and
Thomas Morgenstern
Michael Eichler
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
Marita Weidner
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
Thomas Morgenstern
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
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Abstract

The range of composition (x) is one of the parameters we often have to measure if Si1-xGex layers are generated by chemical vapour deposition (CVD). It is important in this case, in which way the optical properties of Si1-xGex layers depend on the range of composition. We are interested in using multi-wavelength ellipsometry as a technique for rapid, nondestructive characterization of these samples, without large preparations, especially for series of measurements (2D profiles or wafer-lots). The number of unknown parameters and the multiple solutions are reduced by using several wavelengths during the measurement. The calculation is prepared by the help of parameter-correlation based on results of spectroscopical ellipsometry. To examine the results, thickness and composition were controlled for selected samples by cross-sectional transmission electron microscopy (XTEM) and X-ray double crystal diffractometry (DCD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

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