Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-04-30T10:29:46.816Z Has data issue: false hasContentIssue false

Nanocrystalline Undoped Silicon Films Produce by Hot Wire Plasma Assisted Technique

Published online by Cambridge University Press:  17 March 2011

Isabel M.M. Ferreira
Affiliation:
CENIMAT, Departament of Materials Science of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica (Portugal)
Rodrigo F. P. Martins
Affiliation:
CENIMAT, Departament of Materials Science of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica (Portugal)
Ana M. F. Cabrita
Affiliation:
CENIMAT, Departament of Materials Science of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica (Portugal)
Elvira M. C. Fortunato
Affiliation:
CENIMAT, Departament of Materials Science of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica (Portugal)
Paula Vilarinho
Affiliation:
Department of Ceramic and Glass Engineering, UIMC, University Aveiro, 3810-193 Aveiro (Portugal).
Get access

Abstract

In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Usui, S. and Kikuchi, M., J. Non-Cryst Sol., 34, 1 (1979).Google Scholar
2. Fisher, D., Kepner, H., Finger, F., Prasad, K., and Shah, A., In Proc. ff 10th EPVSEC, p.221 (1991).Google Scholar
3. Ferreira, I., Àguas, H., Mendes, L., Fernandes, F., Fortunato, E. and Martins, R., Mat. Res. Soc. Symp. Proc. Vol 507, p. 607 (1998).Google Scholar
4. Chattopadhyay, S., Das, D., Sharma, S. N., Barua, A. K., Banerjee, R. and Kshirsagar, S., Jpn. P. Appl. Phys. 44, 5743 (1995).Google Scholar
5. Langford, A. A., Fleet, M. L., Nelsom, B. P., Langford, W. A. and Maley, N., Phys. Rev B, 45, 13367 (1992).Google Scholar
6. Molenbroek, E. C., Mahan, A. H., and Gallagher, A., J. Appl. Phys., 82, 1909 (1997).Google Scholar
7. Shirai, I., Hanna, J., and Shimizu, I., Jpn. J Appl. Phys. Part2 30, L679 (1991).Google Scholar
8. Doyle, J., Robertson, R., Lin, G. H., He, M. Z., Gallagher, A., J. Appl. Phys. 64, 3215 (1988).Google Scholar
9.J. Tauc: In Photo and Thermal Electric Effects in Semiconductors, ed by Tauc, J. (Pergamon Press, New York, 1962).Google Scholar
10. Middya, A. R., Guillet, J., Brenot, R., Perrin, J., Bouree, J. E., C. Longeaud and Kleider, J. P., Mat. Res. Soc. Symp. Proc. Vol 467, p.271 (1997).Google Scholar
11. Feenstra, K. F., in PhD Thesis, 1998.Google Scholar
12. Brogueira, P., in PhD Thesis, 1997.Google Scholar