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Nanoline Formation by Using Small-Aggregate Resist and Supercritical Resist Drying

Published online by Cambridge University Press:  15 March 2011

Hideo Namatsu
Hideo Namatsu*
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, JAPAN
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Abstract

Nanolines as small as 7 nm wide have been formed using a small-aggregate resist and supercritical resist drying. Aggregates consisting of resist polymers cause pattern roughness and cause nanolines to break. Hydrogen silsesquioxane (HSQ) is a resist material in which the aggregates are small due to its three-dimensional network. Development with an aqueous solution of TMAH provides high-contrast patterns. The problem that nanolines formed in HSQ collapse after development is solved by a supercritical resist drying technique. Supercritical drying suppresses the swelling of the resist by the rinse solution during development and thereby prevents nanolines from collapsing. The use of both small-aggregate HSQ resist and supercritical resist drying enables free-standing nanolines with a high aspect ratio to be formed without collapse.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y2.2
Copyright
Copyright © Materials Research Society 2002

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