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Nanopatterned Si(001) Substrates as Templates for Quantum Dot Growth

Published online by Cambridge University Press:  10 February 2011

A. Ney ,
C. Pampuch ,
J. J. Schulz ,
L. Perepelittchenko  and
R. Koch
A. Ney
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
C. Pampuch
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
J. J. Schulz
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
L. Perepelittchenko
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
R. Koch
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
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Abstract

It has been shown recently, that the formation of GeSi quantum dots on Si(001) is strongly affected by the surface properties of the substrate. With an increasing number of missing dimer vacancies the growth mode can even change from a Stranski-Krastanow to a kinetic 3D island growth mode. Here we report on atomically resolved scanning tunneling microscopy images of Si(001) after different preparation procedures, namely the conventional high temperature procedure employed for commercial wafers, and Shiraki-type samples which require only low temperature treatment. The latter method yields an atomically flat Si(001) (2 × 1) surface, however, with a defect (ad- and missing dimers) concentration depending on the respective preparation conditions. Furthermore, repeated flashing occasionally yields a (2 × n) reconstructed surface consisting of well-ordered self-assembled trenches of missing dimers, similar to the ones discussed controversially in the previous literature. From our results we can clearly exclude contaminants to be involved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.17
Copyright
Copyright © Materials Research Society 2003

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