Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-14T23:44:24.924Z Has data issue: false hasContentIssue false
  • English
  • Français

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

Published online by Cambridge University Press:  10 February 2011

M. Lcurrent ,
M. A. Foad ,
J. G. England ,
D. Lopes ,
C. Jones  and
D. Su
M. Lcurrent
Affiliation:
Applied Materials, Austin, Texas, USA, current_michael@amat.com
M. A. Foad
Affiliation:
Applied Materials, Horsham, West Sussex, England
J. G. England
Affiliation:
Applied Materials, Horsham, West Sussex, England
D. Lopes
Affiliation:
Applied Materials, Santa Clara, CA USA
C. Jones
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
D. Su
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
Get access

Abstract

Atomic profiles (SIMS) and cross-section TEM images of selectively etched, annealed profiles were studied for Boron energies from 20 da eV (200 eV) to 10 keV and RTP anneals at 900, 975 and 1050 C Consistent variations of dopant depth was obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the poly mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 325
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. “The National Technology Roadmap for Semiconductors”, Semiconductor Industry Association, San Jose, CA, USA (1994)Google Scholar
2..Chason, E., Picrauz, S.T., Poate, J.M., Current, M.I., Borland, J.O., Diaz de la Rubia, T., Eaglesham, D.J., Holland, W.O., Law, M.E., Magee, C.W., Mayer, J.W., Melngailis, J., Tasch, A.F., Mat. Res. Soc. Proc. Vol 396 (1996) 859–868 and to appear in J. Appl. Phys. in May, 1997.Google Scholar
3. England, J.G., Joyce, L., Burgess, C., Moffatt, S., Foad, M.A., Armour, D., Current, M.I., in Ion Implantation Technology-96, edited by Ishida, E. et al.(to be published by IEEE in 1997).Google Scholar
4. Riley, T.J., Nanda, A.K., Miner, G., Pas, M.F., Hossain-Pas, S., Velo, L.A., Mat. Res. Soc. Proc. 429 (1996)15.Google Scholar
5. Nanda, A.K., Riley, T.J., Miner, G., Pas, M.F., Hossain-Pas, S., Mat. Res. Soc. Proc. 429 (1996) 23.Google Scholar
6. Pas, M.F., Cleavelin, C.R., Pas, S.D., Kuehne, J., Kittl, J., Wise, R., Hsia, S., Hey, P., in Rapid Thermal Processing '96, edited by Fair, R.B. et al (Boise, Idaho) pp. 21–27.Google Scholar
7. Current, M.I., Castle, M., Chia, V., Mount, G., Weinzierl, S., Prussin, S., Larson, L.A., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
8. Ito, H., Current, M.I., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
9. Klepeis, S.J. et al. Mater. Res. Soc. Proc. 117 (1988) 179.Google Scholar
10. Spinella, C., Raineri, V., La Via, F., Campisano, S.U., J. Vac. Sci. Technol. B14 (1996) 414–420.Google Scholar
11. Foad, M.A., England, J.G., Moffatt, S., Armour, D.G., in Ion Implantation Technology-96, edited by Ishida, E. et al.(to be published by IEEE in 1997).Google Scholar
12. Hatzopoulos, N., Suder, S., van den Berg, J.A., Donnelly, S.E., Cook, C.E.A., Armour, D.G., Lucassen, M., Frey, L., Bailey, P., Noakes, C.T., Panknnin, D., Fukarek, W., Foad, M.A., England, J.G., Moffatt, S., Ohno, H., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
13. Smith, R., Webb, R.P., Phil. Mag. Lett. 64 (1991) 253–260.Google Scholar
14. Diaz de la Rubia, T., private communication (1997).Google Scholar
15. Downey, D.F., Liebert, R.B., Nucl. Instr. and Meth. B55 (1991) 49–54.Google Scholar
16. Duane, M., Nunan, P., ter Beek, M., Subramanian, R., J. Vac. Sci. Technol. B14 (1996) 218–223.Google Scholar
17. Nakagawa, S.T., Thome, L., Saito, H., Clerc, C., Nucl. Instr. and Meth. B121 (1997) 36–39.Google Scholar
18. Hobler, G., Selberherr, S., IEEE Trans, on CAD 8 (1989) 450–459 Google Scholar
19. Hobler, G., private communication (1996).Google Scholar
20. Current, M.I., Cheung, N.W., Hemment, P.L.F., Yamada, I., Matsuo, J., in Ion Implantation Science and Technology, ed. Ziegler, J.F., Ion Implantation Technology Co. (1996) 92–174.Google Scholar