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Near-Threshold Electromigration of Damascene Copper on TiN Barrier

Published online by Cambridge University Press:  01 February 2011

William K. Meyer ,
Raj Solanki  and
David Evans
William K. Meyer
Affiliation:
Oregon Health &Science University, Beaverton, OR 97006-8921USA
Raj Solanki
Affiliation:
Oregon Health &Science University, Beaverton, OR 97006-8921USA
David Evans
Affiliation:
Sharp Laboratories of America, Inc., Camas, WA 98607USA
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Abstract

Electromigration measurements of dual-damascene VLSI copper interconnect with sputtered TiN barrier was performed to measure both long-line (Jmax) performance and EM threshold (JLmax). Wafer-level stress of via chains with various segment lengths was combined with a statistical efficient experiment design to explore various conditions with minimum sample size. Resistance saturation was observed with exponential time constant corresponding to vacancy diffusivity. Time to opens failure by resistance increase follows Black's equation with current exponent n=1.90 and activation energy Ea=0.94 eV. Thermal gradients due to high current stress were characterized and accounted-for in acceleration models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.24
Copyright
Copyright © Materials Research Society 2003

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References

1.The International Technology Roadmap for Semiconductors, 2002 update, can be found at http://public.itrs.net/Files/2002Update/2002Update.pdf, p. 75 Google Scholar
2. Blech, I. A., J. Appl. Phys. 47, p.1203 (1976)Google Scholar
3. Thrasher, S., Capasso, C., Zhao, L., Hernandez, R., Mulski, P., Rose, S., Nguyen, T., Kawasaki, H., IEEE International Interconnect Technology Conference, proc 2001, p 177–9 (2001)Google Scholar
4. Wang, P.C.; Filippi, R.G., Applied Physics Letters, v 78, n 23, p. 3598 (2001)Google Scholar
5. Arnaud, L., 2002 IEEE International Reliability Physics Symposium. proc. 40th Annual, p 433–4 (2002)Google Scholar
6. Hau-Riege, S. P. and Thompson, C. V., J. Appl. Phys. 88, p.2382 (2000)Google Scholar
7. Kircheim, R., in Materials Reliability Issues in Microelectronics III, (Mater. Res. Soc. proc 309, 1993) p.101 Google Scholar
8. Hu, C.K., Gignac, L., Rosenberg, R., Liniger, E., Rubino, J., Sambucetti, C., Domenicucci, A., Chen, X., and Stamper, A. K., Appl. Phys. Lett. 81, 1782 (2002)Google Scholar
9. Wang, P.C., Noyan, I. C., Kaldor, S.K., Jordan-Sweet, J. L., Liniger, E. G., and Hu, C.K., Appl. Phys. Lett. 76, 3726 (2000)Google Scholar