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A New Flexible Rapid Thermal Processing System

Published online by Cambridge University Press:  15 February 2011

K. C. Saraswat ,
Y. Chen ,
L. Degertekin  and
B. T. Khuri-Yakub
K. C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University Stanford, CA.
Y. Chen
Affiliation:
Department of Electrical Engineering, Stanford University Stanford, CA.
L. Degertekin
Affiliation:
Department of Electrical Engineering, Stanford University Stanford, CA.
B. T. Khuri-Yakub
Affiliation:
Department of Electrical Engineering, Stanford University Stanford, CA.
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Abstract

A highly flexible Rapid Thermal Multiprocessing (RTM) reactor is described. This flexibility is the result of several new innovations: a lamp system, an acoustic thermometer and a real-time control system. The new lamp has been optimally designed through the use of a “virtual reactor” methodology to obtain the best possible wafer temperature uniformity. It consists of multiple concentric rings composed of light bulbs with horizontal filaments. Each ring is independently and dynamically controlled providing better control over the spatial and temporal optical flux profile resulting in excellent temperature uniformity over a wide range of process conditions. An acoustic thermometer non-invasively allows complete wafer temperature tomography under all process conditions - a critically important measurement never obtained before. For real-time equipment and process control a model based multivariable control system has been developed. Extensive integration of computers and related technology for specification, communication, execution, monitoring, control, and diagnosis demonstrates the programmability of the RTM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 307
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Apte, P. P. and Saraswat, K. C., “IEEE Trans. Semiconductor Manufacturing, Vol 5, No 3, pp. 180–188, August 1992.Google Scholar
2 Saraswat, K. C. et al. , IEEE Trans. Semicond. Manufac., vol.7, No. 2, May 1994, p l95. Google Scholar
3 Lord, H. A., IEEE Trans. Semicond. Manufac, vol. 1, 1988, p105. Google Scholar
4 Norman, S., IEEE Trans, on Electron Dev., Vol. 39, pp. 205–207, 1992.Google Scholar
5 Schaper, C., Moslehi, M., Saraswat, K., Kailath, T., IEEE Trans. Semi. Manuf 1994 Vol 7 No. 2, May 1994, pp. 202–219.Google Scholar
6 Schaper, C., Moslehi, M. M., Saraswat, K. C. and Kailath, T., J. Electrochem. Soc Vol 141 No. 11, November 1994, pp. 3200 – 3209.Google Scholar
7 Campbell, S. A., Ahn, K. H., Knutson, K. L., Leighton, J. D. and Liu, B. Y., IEEE Trans Semicond. Manufac, vol. 4, 1991, p l4. Google Scholar
8 Knutson, K. L., Campbell, S. A. and Dunn, F., IEEE Trans. Semicond. Manufac, vol 7 No 1 1994, p68. Google Scholar
9 Cook, R. L., Torrance, K. E., ACM Trans. Graphics, vol. 1, No. 1. Jan. 1982, p7 Google Scholar
10 Lee, Y. J., Degertekin, F. L., Pei, J.. Khuri-Yakub, B. T. and Saraswat, K. C., IEEE Int. Electron Dev. Meet. Washington, D. C., Dec. 6-8, 1993.Google Scholar
11 Degertekin, F. L., Pei, J., Khuri-Yakub, B. T. and Saraswat, K. C., Applied Physics Letters, Vol. 64(11), 14 March 1994, pp. 1338–1340.Google Scholar
12 Dankoski, P., Gyugyi, P., and Franklin, G. F., Mater. Res. Soc. Proc: Rapid Thermal and Integrated Processing, San Francisco, April, 1993.Google Scholar