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New, Germanium - Related Defect in Neutron - Irradiated Gallium Phosphide

Published online by Cambridge University Press:  25 February 2011

J. Barczynska  and
E. Goldys
J. Barczynska
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warszawa, Poland
E. Goldys
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warszawa, Poland
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Abstract

GaP crystals were irradiated with thermal neutrons with a fluence 1.4 * 10 19 neutrons / cm2 . The isochronal annealing at temperatures up to 800°C resulted in n - type conductivity of irradiated samples. After 800°C anneal 10% of transmuted Ge atoms become neutral donors. Simultaneously the absorption spectrum shows a broad band centered at 1 eV. The similar feature is observed in photoconductivity. The origin of the absorption band is discussed. The band is most likely due to germanium - related defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 179
Copyright
Copyright © Materials Research Society 1990

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