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New hybrid low-k dielectric materials prepared by vinylsilane polymerization

Published online by Cambridge University Press:  17 March 2011

Jung-Won Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Byung Ro Kim
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Gwi-Gwon Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Myung-Sun Moon
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Bum-Gyu Choi
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Min-Jin Ko
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
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Abstract

Spin-on Low-K materials are potentially very attractive as interconnection materials in a wide range of semiconductor structures. In this work, new organic-inorganic hybrid materials synthesized by vinylsilane polymerization were proposed. According to compositions and additional fabrications, dielectric constants of these materials were evaluated to be 2.3∼3.1. The hardness was 2.0GPa after 430°C curing. These materials had good adhesion strength such that fracture toughness on silicon wafer was 0.22 MPam0.5 without any adhesion promoters. This result indicates that these organicinorganic hybrid materials are very promising candidates for low-K dielectrics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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