Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-16T06:11:33.774Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

M. Touzeau ,
A. Schuhl ,
R. Cabanel ,
P. Luzeau ,
A. Barski ,
D. Pagnon ,
J.P. Hirtz  and
G. Creuzet
M. Touzeau
Affiliation:
LPGP Université Paris Sud/91405 ORSAY Cedex/France
A. Schuhl
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
R. Cabanel
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
P. Luzeau
Affiliation:
ISA-Riber 133 Bd. National/92503 REUIL MALMAISON/France
A. Barski
Affiliation:
ISA-Riber 133 Bd. National/92503 REUIL MALMAISON/France
D. Pagnon
Affiliation:
LPGP Université Paris Sud/91405 ORSAY Cedex/France
J.P. Hirtz
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
G. Creuzet
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
Get access

Abstract

We describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 539
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Gousset, G., Panafieu, P., Touzeau, M., and Vialle, M., Plasma Chem. Plasma Process, 7, 409, (1987).Google Scholar
2Gousset, G., Touzeau, M., Vialle, M., and Ferreira, C.M., Plasma Chem Plasma Process, 9, 189, (1989).Google Scholar
3 See for example: Roth, A., Vacuum Technology, 2nd ed.(North Holland, 1982).Google Scholar
4Schuhl, A., Cabanel, R., Koch, S., Siejka, J., Touzeau, M., Hirtz, J.P. and Creuzet, G., Proceeding of M2S-HTSC conf., Standford (1989).Google Scholar
5Schuhl, A., Cabanel, R., Ghyselen, B., Hirtz, J.P., and Creuset, G., To be presented at the International conf. of Epitaxial Cristal Growth, Budapest (1989).Google Scholar