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A New Recrystallization Technique for Large Area Thin Film Silicon on Glass Structure

Published online by Cambridge University Press:  28 February 2011

Hiroshi Hayama ,
Masahito Mukainari  and
Takeshi Saito
Hiroshi Hayama
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
Masahito Mukainari
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
Takeshi Saito
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
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Abstract

A new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 293
Copyright
Copyright © Materials Research Society 1991

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References

1. Lee, K. F., Gibbons, J. F., Saraswat, K. C., and Kamins, T. I., “Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon,” Appl. Phys. Lett., vol. 35, pp.173–175, July 1979 Google Scholar
2. Kamins, T. I. and Von Herzen, B. P., “MOSFET's in electron-beam recrystallized polysilicon,” Electron. Dev. Lett., EDL–2, pp. 313–315, December 1981 Google Scholar
3. Sameshima, T., Sekiya, M., and Usui, S., “XeCl excimer laser annealing used in the fabrication of poly-Si TFT's,” Late News Abst. ICSSDM, 17th C-3-8LN, 1985, pp. 12–13 CrossRefGoogle Scholar
4. Hunt, C. E. and Frey, J., “Electrical and Physical Properties of Rapid-Zone-Recrystallized SO Made Using a Pulsed Arc Lamp,” Extended Abst. ICSSDM, 18th B-10-5, Tokyo, 1986, pp. 561–564 CrossRefGoogle Scholar
5. Fan, J. C. C., Geis, M. W., and Tsaur, B-Y., “LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS,” IEDM Technical Digest, Washington, D. C., Dec. 1980, p.845 Google Scholar
6. Tsaur, B-Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J., and Mountain, R. W., “Improved techniques for growth of large-area single-crystal Si sheets over Si02 using lateral epitaph by seeded solidification,” Appl. Phys. Lett., vol. 39, pp. 561–563, October 1981 Google Scholar