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A New Type TFT With Unique Operation And Simple Fabrication Process

Published online by Cambridge University Press:  15 February 2011

Reiji Hattori ,
Yukinobu Tanida  and
Junji Shirafuji
Reiji Hattori
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
Yukinobu Tanida
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
Junji Shirafuji
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
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Abstract

A thin film transistor (TFT) with a new structure and a unique operation principle has been pioposed. This TFT has Schottky barrier contacts at source and drain, and employs electron tunneling through the Schottky barrier. The first feature of this TFT is simplification of the production process because a self-aligned technique is applicable and an ion-implantation process is not necessary. These advantages are promising for low-cost production of active-matrix liquid crystal displays (AM-LCDs). In this letter, we propose of new type TFT and carry out 2-D device simulation on a simplified structure to show the fundamental characteristics of this transistor and to optimize impurity density, channel thickness, and barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 217
Copyright
Copyright © Materials Research Society 1994

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References

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