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Nonlinear Optical Properties of Cds-SiO2 Glass Composite Thin Films Prepared by RF-Sputtering

Published online by Cambridge University Press:  15 February 2011

I. Tanahashi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
M. Yoshida
Affiliation:
Department of Applied Physics, Faculty of Engineering, Nagoya University
Y. Manabe
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
T. Mitsuyu
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
T. Tokizaki
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
A. Nakamura
Affiliation:
Department of Applied Physics, Faculty of Engineering, Nagoya University
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Abstract

CdS-microcrystallites-embedded films of SiO2 were successfully prepared by rf-sputtering. The optical absorption edge of the film with 18.5 at% CdS clearly exhibited a blue shift by 0.13 eV compared to bulk CdS, indicating the quantum size effect due to confinement of electrons and holes in CdS microcrystallites. The blue-shift decreased with increasing the CdS concentration. The photoluminescence spectra of the films also exhibited the blue shift in band-edge emission. From decay curves of the band-edge emission, the dominant decay time was estimated to be 100 ps, and longer components were weak. Optical nonlinear susceptibility of the films was measured by degenerated four-wave mixing experiments near band-edge. The third-order nonlinear susceptibility was estimated to be 5.0 × 10−7 esu at 77K for the film with 46.3 at% of CdS.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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