Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-24T14:54:04.868Z Has data issue: false hasContentIssue false
  • English
  • Français

Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  01 February 2011

Charles W. Magee ,
Temel H. Buyuklimanli ,
John W. Marino ,
Steven W. Novak  and
M. Alper Sahiner
Charles W. Magee
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
Temel H. Buyuklimanli
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
John W. Marino
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
Steven W. Novak
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
M. Alper Sahiner
Affiliation:
Evans East (A member of the Evans Analytical Group) 104 Windsor Center Drive, Suite 101, East Windsor, New Jersey 08520 USA
Get access

Abstract

New, non-routine metrology issues are addressed for three kinds of materials and processes that are necessary for the fabrication of ultra-high speed devices. We look at the problems and solutions for measuring both stoichiometry and dopant content of SiGe material when using Cs primary ion bombardment. We examine the challenges of determining the N content of ultra-thin SiON gate dielectrics with emphasis on what will be necessary for the measurement of 1nm thick oxides. And finally we show some promising early results of using a new protocol for measuring ULE B ion implant profiles in the top 3nm with emphasis on obtaining a more realist profile shape in this region for TCAD modeling purposes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C6.1/B9.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ozturk, M.C., Pesovic, N., Liu, J., Kang, I., Mo, H. and Gannavaram, S., (Proceedings of this symposium).Google Scholar
2. Lanzerotti, L.D., Strum, J.C., Stach, E., Hull, R., Buyuklimanli, T. and Magee, C., Appl. Phys. Lett. 70 (23), 3125 (1997).Google Scholar
3. Frost, M.R. and Magee, C.W., Appl. Surf. Sci. 104/105, 379 (1996).Google Scholar
4. Shallenberger, J.R., Cole, D.A. and Novak, S.W., J. Vac. Sci. Technol. A 17 (4), 1086 (1999).Google Scholar
5. Novak, S.W., Shallenberger, J.R., Cole, D.A. and Marino, J.W. in Ultra-Thin SiO2 and High K Materials for ULSI Gate Dielectrics, edited by Green, M.L., Hatorri, T., Huff, H.R., Lucovsky, G. and Richter, C.A., (Mater. Res. Soc. Proc. 567, Pittsburgh, PA, 1999) pp. 579–586.Google Scholar
6. Novak, S.W., Bekos, E.J. and Marino, J.W., Appl. Surf. Sci. 175-176, 678 (2001).Google Scholar
7. Benninghoven, A., Z. Phys. 230, 403 (1971).Google Scholar
8. Hoffmann, S., Appl. Phys. 9, 59 (1976).Google Scholar
9. Seah, M.P., Sanz, J.M. and Hoffmann, S., Thin Solid Films 81, 239 (1981).Google Scholar
10. Chu, P.K., V.Chia, K.F., Smith, S.P. and Magee, C.W., Mater. Chem. Phys., 52, 60 (1998).Google Scholar
11. Chia, V.K.F., Mount, G.R., Edgell, M.J. and Magee, C.W., J. Vac. Sci. Technol. B 17 (5), 2345 (1999).Google Scholar
12. Magee, C.W., Jacobson, D. and Gossmann, H.J., J. Vac. Sci. Technol. B 18 (1), 489 (2000).Google Scholar
13. Fruhauf, J., Lindsay, R., Vandervorst, W. and Koch, K., paper C3.4, these proceedings.Google Scholar
14. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, Wilson, R.G., Stevie, F. A. and Magee, C.W., (John Wilely and Sons, New York, 1989) p. App. D.1. Google Scholar