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Novel Compact and High-Resolution Ion Backscattering Analysis System,Chiribas

Published online by Cambridge University Press:  25 February 2011

Yoshiaki Kido
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute-cho, Aichi-gun, Aichi-ken, 480–11, Japan
Akira Kawano
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute-cho, Aichi-gun, Aichi-ken, 480–11, Japan
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Abstract

The design and performance of CHIRIBAS(Compact and High-Resolution Ion Backscattering Analysis System) are presented. The system consists of a 60 kV duoplasmatron and unique energy analysis systems connected to a microcomputer. The 5–60 keV H, He, and He+ beams are backscattered to 180° and their energies are analyzed by a time-of-flight technique or with an electrostatic deflector combined with a position sensitive microchannel plate. The probing depth and depth resolution are estimated to be up to 50 nm and better than 0.5 nm, respectively. The computer-simulated spectrum analysis allows rapid and accurate determination of surface and interface structures such as depth profiles of elemental compositions and lattice defects. CHIRIBAS also makes it possible to measure excited state populations using Stark ionization for 5–10 keV H neutralized at the exit surface and thus provides the possibility to determine the energy and spatial distributions of the valence electrons extending outward from the top surface. The present article includes the beam parameters achieved and the preliminary data on reactive-ion etched Si surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Chu, W.K., Mayer, J.W., and Nicolet, M-A., Backscattering Spectrometry, (Academic, New York, 1978).Google Scholar
2. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface on Thin Film Analysis (North-Holland, New York, 1986).Google Scholar
3. Loenen, E.J. van, Iwami, M., Tromp, R.M., and Veen, J.F. van der, Surf. Sci. 137, 1 (1984).Google Scholar
4. Oehrlein, G.S., Tromp, R.M., Tsang, J.C., Lee, Y.H., and Petrillo, E.J., J. Electrochem. Soc. 132, 1441 (1985).Google Scholar
5. Aono, M., Nucl. Instrum. Methods, B2, 374 (1984).Google Scholar
6. Niehus, H. and Comsa, G., Nucl. Instrum. Methods, B15, 122 (1986).Google Scholar
7. Kido, Y. and Koshikawa, T., J. Appl. Phys. in press.Google Scholar
8. Ziegler, J.F., Biersack, J.P., and Littmark, W., The Stopping and Range of Ions in Matter, (Pergamon, New York, 1985).Google Scholar
9. Kido, Y. and Koshikawa, T., to be published in Phys. Rev. A.Google Scholar
10. Feldman, L.C. and Rodgers, J.W., J. Appl. Phys. 41, 3776 (1970).Google Scholar
11. Smeenk, R.G., Tromp, R.M., Kersten, H.H., Boerboom, A.J.H., and Saris, F.W., Nucl. Instrum. Methods 195, 581 (1982).Google Scholar