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Novel Glide Planes in Epitaxially Grown Semiconductors

Published online by Cambridge University Press:  25 February 2011

M. Albrecht ,
H. P. Strunk ,
P. O. Hansson  and
E. Bauser
M. Albrecht
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften VII, Cauerstr.6, DW-8520 Erlangen, Federal Republic of Germany
H. P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften VII, Cauerstr.6, DW-8520 Erlangen, Federal Republic of Germany
P. O. Hansson
Affiliation:
Max-Planck-Institut für Festkölrperforschung, Heisenbergstr.1, DW-7000 Stuttgart 80, Federal Republic of Germany
E. Bauser
Affiliation:
Max-Planck-Institut für Festkölrperforschung, Heisenbergstr.1, DW-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

The accommodation of misfit stresses during heteroepitaxial growth of Ge0.85Si0.15 on Si(110) from In solution is studied by transmission electron microscopy. The regular misfit dislocation network forms at the interface and can be explained by glide of dislocations in a secondary a/2<110>{311} glide system. The occurrence of this secondary glide system is analyzed in terms of a mechanical equilibrium analysis that includes a frictional force due to a static Peierls barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 437
Copyright
Copyright © Materials Research Society 1993

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References

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