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A Novel Growth Method for High Quality GaAs/CaF2/Si(111) Structures by Using “Type-A” CaF2 Film

Published online by Cambridge University Press:  21 February 2011

H. Mizukami ,
A. Ono ,
K. Tsutsui  and
S. Furukawa
H. Mizukami
Affiliation:
Research Division, Komatsu Ltd., 1200 manda, Hiratsuka 254, Japan
A. Ono
Affiliation:
Dept. of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
K. Tsutsui
Affiliation:
Dept. of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
S. Furukawa
Affiliation:
Dept. of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
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Abstract

Control of epitaxial relationship of CaF2 films grown on Si(111) substrates was considered to be important to improve surface morphology and crystallini ty of GaAs films on CaF2/Si(111) structures. We successfully grew CaF2 films with the “type-A” epitaxial relationship on Si(111) substrates, that is, the crystallographic orientation of the CaF2 films were aligned in the same direction as that of the Si(111) substrates. These “type-A” CaF2 films were grown by a two step growth method. It was found that surface morphology of GaAs films on the CaF2/Si(111) structures was drastically improved by growth of the “type-A” CaF2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 505
Copyright
Copyright © Materials Research Society 1992

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