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A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers

  • J. Lagowski (a1), A. Hofl (a1), L. Jastrzebski (a1), P. Edelman (a2) and T. Esry (a3)...
Abstract

A new generation of monitoring tools based on oxide potential and surface photovoltage measurements offers real-time, non-contact diagnostics of plasma damage, especially dielectric charge build-up, radiation damage, and heavy metal contamination. The approach relies on reusable, 10 00Åoxide monitor wafers rather than test structures. The technique generates whole wafer maps powerful for correlating plasma damage with plasma equipment characteristics.

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[3] Nauka, K., Lagowski, J., Edelman, P., Presented at and published in the proceedings of DRIP VI 1995. Estes Park, CO. December 3–6, 1995.
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  • EISSN: 1946-4274
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