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The Nucleation and Growth of Polycrystalline Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

Brian W. Sheldon  and
Theodore M. Besmann
Brian W. Sheldon
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Theodore M. Besmann
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Silicon carbide was deposited from methyltrichlorosilane onto polished polycrystalline SiC substrates at reduced pressure, and the resultant surface morphology was characterized by analyzing the angular spectrum of scattered light which was generated with a He-Ne laser. Light-scattering analyses incorporating specific nucleation and growth models were developed. With these methods, it was possible to analyze the angular scattering spectra and directly measure the nucleation and growth rates. These results were verified by using image analysis to quantify the number and size distribution of surface features that were observed with scanning electron microscopy. The nucleation and growth rates that were obtained by fitting the models to the image-analysis results were in good agreement with the rates obtained from the light-scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 161
Copyright
Copyright © Materials Research Society 1991

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References

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