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Observation of Electromigration Voiding in Cu Lines

Published online by Cambridge University Press:  10 February 2011

Seok-Hee Lee ,
John C. Bravman ,
Paul A. Flinn  and
Lucile Arnaud
Seok-Hee Lee
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Paul A. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Lucile Arnaud
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Cu film characteristics and in-situ observation of electromigration voiding in passivated Cu lines are reported. Measured grain size distribution show a median grain size of 0.4 μm. A 3 μm wide, 800 μm long line passivated with 5000 Å of SiO2 was tested in a high voltage scanning electron microscopy (HVSEM), enabling dynamic in-situ events to be recorded. Electromigration voiding in this line showed some similarity to that previously observed in polygranular Al lines. Transmission electron microscopy was used to study the microstructure of the passivated Cu lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 235
Copyright
Copyright © Materials Research Society 1997

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References

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