Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-12T20:39:50.281Z Has data issue: false hasContentIssue false

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

Published online by Cambridge University Press:  01 February 2011

Satreerat Kampangkeaw
Affiliation:
Department of Physics, University of Colorado at Boulder, Boulder, Colorado 80309, U.S.A.
Charles T. Rogers
Affiliation:
Department of Physics, University of Colorado at Boulder, Boulder, Colorado 80309, U.S.A.
Get access

Abstract

We have measured the nonlinear dielectric properties of strontium titanate (STO) thin films grown on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. The films prepared by off-axis pulsed laser deposition were characterized by their dielectric constant and loss tangent at 1 MHz and 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position of the substrates with respect to the plume axis. STO films on LAO substrates show low loss and high dielectric constant in regions near the plume axis. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis. We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent in the presence of a DC electric field up to +/- 4 V/μm. Careful mapping of the plume crossection allowed us to improve the quality and reproducibility of the dielectric films, obtaining a best figure of merit at 2 GHz and 4 K close to 100 for NGO substrate but only well off axis.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vendik, O. G., Ter-Mertirosyan, L. T., Dedyk, A. I., Karmanenko, S. F., and Chakalov, R. A., Ferroelectrics 144, 33 (1993).Google Scholar
2. Li, H. C., Si, W., West, A. D., and Xi, X. X., Appl. Phys. Lett, 73, 190 (1998).Google Scholar
3. Muller, K. A. and Burkard, H., Phys. Rev. B, 19, 3593 (1979).Google Scholar
4. Vendik, O. G., Ter-Mertirosyan, L. T. and Zubko, S. P., J. Appl. Phys. 84, 995 (1998).Google Scholar
5. Eddy, M. M., Hanson, R., Rao, M. R., Zuck, B., Speck, J. S., and Tarso, E. J., Mater. Res. Soc. Symp. Proc. 474, 365371 (1997).Google Scholar
6. Dalberth, M. J., PhD. Thesis, University of Colorado at Boulder, 1999.Google Scholar
7. Dalberth, M. J., Stauber, R. E., Price, J. C., and Rogers, C. T., Appl. Phys. Lett. 72(4), 507509 (1998).Google Scholar
8. Bouzehouane, K., Woodall, P., Marchilhac, B., Khodan, A. N., Crete, D., Jacquet, E., Mage, J. C. and Contour, J.P., Appl. Phys. Lett. 80(1), 109111 (2002).Google Scholar
9. Rogers, C.T., Dalberth, M.J. and Price, J.C., Materials Issues for Tunable RF and Microwave Device. Symposium 603, 265 (2000).Google Scholar