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Ohmic Contact Metallization for n-Type GaAs

Published online by Cambridge University Press:  25 February 2011

M. Murakami ,
T. Oku ,
A. Otsuki  and
C. J. Uchibori
M. Murakami
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606 Japan
T. Oku
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606 Japan
A. Otsuki
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606 Japan
C. J. Uchibori
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606 Japan
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Abstract

The performance of GaAs devices is significantly influenced by the qualities of the substrates, Schottky and Ohmic contact materials. Development of Ohmic contact materials is far behind compared with that of the other materials. Low resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 263
Copyright
Copyright © Materials Research Society 1994

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References

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