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On the Moss-Burstein Shift in Quantum Confined Optoelectronic Ternary and Quaternary Materials

Published online by Cambridge University Press:  10 February 2011

Kamakhya P. Ghatajc ,
B. Nag  and
S. N. Biswas
Kamakhya P. Ghatajc
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92 Acharya Prafulla Chandra Road, Calcutta-700009, India
B. Nag
Affiliation:
Department of Applied Physics, Calcutta University, University College of Science and Technology, 92 Acharya Prafulla Chandra Road, Calcutta-700009, India
S. N. Biswas
Affiliation:
RWTH Aachen, 5100 Aachen, Walter Schotty Hass, Sommerfeld Strasse, Germany
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Abstract

In this paper we have studied, the Burstein-Moss shift (BMS) in quantum wires (QWs) and quantum dots (QDs) of ternary and quaternary types of optoelectronic materials on the basis of a newly formulated electron dispersion law which occours as a result of heavy doping. It has been found, taking Hg1−xCdx.Te and In1−x.Gax.AsyP1−y lattice matched to InP as examples, that the BMS increases with :Lncreasing electron concentration and decreases with increasing film thickness in oscillatory manners for both types of quantum confinements, although the variations are totally band structure dependent. The numerical values of BMS is greatest in QDs and least in QWs together with the fact that the BMS in quaternary materials is greater than that of ternary comupounds. In addition the theoretical analysis is a quantitative agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 345
Copyright
Copyright © Materials Research Society 1996

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References

[1] Mitra, B. and Ghatak, K. P., Phys. Letts.137A, 413(1989) and the references cited therein.Google Scholar
[2] Linch, M. T., Festkarperprobleme, 23, 227(1983).Google Scholar
[3] Ghatak, K. P. and Mondal, M., J. App-T Phys. 69, 1666(1991).Google Scholar
[4] Seeger, K. Semiconductor Physics (Springer-Verlag, Germany, 1990)Google Scholar
[5] Ghatak, K. P., De, B. and Mondal, H., Phys. Stat. Sol.(b), 165,1666 K33(1991).Google Scholar
[6] Ghata-k, K.P., SPIE, 1626, 372(1992).Google Scholar
[7] Roy, D. K., Quantum-Mechanical Tunneling and its applications (World Scientific Press, Singapore, 1988).Google Scholar
[8] Ghatak, K. P. and Mondal, M., Phys.Stat. Sol.(b) 170,57 (1992).Google Scholar
[9] K. P. Ghatak M. Mondal and S. N. Biswas, J. Appl. Phys. 68,3032(199), Ghatak, K.P. and Mondal, M., J. Appl. Phys. 71, 1277,(1992).Google Scholar
[10] Kane, E O., J.Phys. Chem. Solids, 1, 249(1957).Google Scholar
[11] Abramowitz, M. and Stegun, I. A., HanJ Book of Mathematical Functions (Dover, New York, 1965)Google Scholar
[12] Tsidilkovskii, I. M., Karus, G. I. and Shelushinna, N. G., Adv.in Phys. 34, 43(1985).Google Scholar
[13] K. P. Ghatal-and Mitra, B., Physics Scripta 46,182(1992).Google Scholar
[14] Brandt, L. M., Aganov, S. T. and Petroslj-i, I. P., J.Exp. and Theo. Phys.150, 340(1992).Google Scholar
[15] Nag, B. R., Electron Transport in compound Semiconductors (Springer-Verlag, Heidelberg, Germany,1980).Google Scholar