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On the Origin of the Electrically-Induced Spectral Shift of Porous Silicon Photo- and Electro- Luminescence

Published online by Cambridge University Press:  28 February 2011

A. Bsiesy ,
M.A. Hory ,
F. Gaspard ,
R. Herino ,
M. Ligeon ,
F. Muller ,
R. Romestain  and
J.C. Vial
A. Bsiesy
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
M.A. Hory
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
F. Gaspard
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
R. Herino
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
M. Ligeon
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
F. Muller
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
R. Romestain
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
J.C. Vial
Affiliation:
Laboratoire de Spectrométrie Physique (CNRS URA 08), Université J. Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères, France
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Abstract

Experimental results showing two electrically-induced phenomena, namely the voltage-tunable electroluminescence (VTEL) and the voltage-induced quenching of porous silicon photoluminescence(QPL) are given. In both cases, a spectral shift as large as 300 nm can be recorded for an external bias variation of only 0.5V. This spectral shift is characterised by a blue-shift of the whole EL line in the case of the VTEL whereas it results from a progressive and selective quenching starting by the low-energy part of the luminescence line in the case of the QPL experiments. The origin of this spectral shift is discussed in relation with an electrically-induced selective carrier injection into the silicon nanocrystallites accompanied with an enhancement of the non-radiative recombination which might take place by an Auger relaxation process. Finally, it is shown that a partial oxidation of the porous silicon layer leads to a complete loss of the selectivity of these two phenomena. This result is qualitatively discussed by considering the voltage drop distribution between the substrate and the silicon nanocrystallites. The voltage drops are modified by the growth of the oxide layer on the nanocrystallite surface leading to a modification of the energy barriers at the crystallite boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 619
Copyright
Copyright © Materials Research Society 1995

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References

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