Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-29T13:12:31.156Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Published online by Cambridge University Press:  15 February 2011

L.H. Robins ,
A.J. Paul ,
C.A. Parker ,
J.C. Roberts ,
S.M. Bedair ,
E.L. Piner  and
N.A. El-Masry
L.H. Robins
Affiliation:
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899
A.J. Paul
Affiliation:
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899
C.A. Parker
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J.C. Roberts
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
S.M. Bedair
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
E.L. Piner
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
N.A. El-Masry
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Get access

Abstract

InGal-xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also present in the lower-x films (x<0.2). Both Raman and photoluminescence excitation spectra show features that correlate with compositional inhomogeneity and phase separation in the films with x>0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.22
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Sugiura, L., Nishio, J., Onomura, M., Nunoue, S., Itaya, K., and Ishikawa, M., in Nitride Semiconductors, edited by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., and Strite, S. (Mater. Res. Soc. Proc. 482, Warrendale, PA, 1998), p. 1157–1167 Google Scholar
2 Osamura, K., Naka, S., and Murakami, Y., J. Appl. Phys. 46, 3432 (1975)Google Scholar
3 Singh, R., Doppalapudi, D., Moustakas, T.D., and Romano, L.T., Appl. Phys. Lett. 70, 1089 (1997)Google Scholar
4 Piner, E.L., El-Masry, N.A., Liu, S.X. and Bedair, S.M., in Nitride Semiconductors, ibid., p. 125–130 Google Scholar
5 Doppalapudi, D., Basu, S.N., Ludwig, K.F. Jr and Moustakas, T.D., J. Appl. Phys. 84, 1389 (1998)Google Scholar
6 Ho, I. and Stringfellow, G.B., Appl. Phys. Lett. 69, 2701 (1996)Google Scholar
7The use of trade names or brand names does not imply endorsement of the product by NIST.Google Scholar
8 Larason, T.C., Bruce, S.S. and Cromer, C. L., J. Res. Natl. Inst. Stand. Technol. 101, 133 (1996)Google Scholar
9 Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992)Google Scholar