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Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

Published online by Cambridge University Press:  15 February 2011

R. H. Birkhahn ,
R. Hudgins ,
D. S. Lee ,
B.K. Lee ,
A. J. Steckl ,
A. Saleh ,
R. G. Wilson  and
J. M. Zavada
A. J. Steckl
Affiliation:
University of Cincinnati, Nanoelectronics Lab, Cincinnati, OH 45221-0030
A. Saleh
Affiliation:
Charles Evans & Associates, Sunnyvale, CA 94086
R. G. Wilson
Affiliation:
Charles Evans & Associates, Sunnyvale, CA 94086
J. M. Zavada
Affiliation:
USARO, Research Triangle Park, NC 27709
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Abstract

We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 × 1021 atoms/cm3 accompanied by a high oxygen impurity concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.80
Copyright
Copyright © Materials Research Society 1999

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References

1 Coffa, S., Franzo, G., and Priolo, F., MRS Bulletin 23, 25 (April 1998).Google Scholar
2 Ren, F.Y.G., Michel, J., Sun-Paduano, Q., Zheng, B., Kitagawa, H., Jacobson, D.C., Poate, J.M. and Kimerling, L.C., Mat. Res. Soc. Symp. Proc. 301, 87 (1993).Google Scholar
3 Franzo, G., Priolo, F., Coffa, S., Polman, A. and Camera, A., Appl. Phys. Lett. 64 (17), 2235 (1994).Google Scholar
4 Priolo, F., Franzo, G., Coffa, S., Polman, A., Bellani, V., Camera, A. and Spinella, C, Mat. Res. Soc. Symp. Proc. 316, 397 (1994).Google Scholar
5 Buyanova, I.A., Chen, W.M., Pozina, G., Ni, W.X., Hansson, G.V. and Monemar, B., J. Vac. Sci. Tech. B 16 (3), 1732 (1998).Google Scholar
6 Smith, R.S., Muller, H.D., Ennen, H., Wennekers, P. and Maler, M., Appl. Phys. Lett. 50 (1), 49 (1987).Google Scholar
7 Chang, S.J. and Takahei, K., Appl. Phys. Lett. 65 (4), 433 (1994).Google Scholar
8 Elsaesser, D.W., Yeo, Y.K., Hengehold, R.L., Evans, K.R. and Pedrotti, F.L., J. of Appl. Phys. 77 (8), 3919 (1995).Google Scholar
9 Takahei, K. and Taguchi, A., J. of App. Phys. 77 (4), 1735 (1995).Google Scholar
10 Steckl, A.J. and Birkhahn, R., Appl. Phys. Lett. 73 (12), 1700 (1998).Google Scholar
11 Birkhahn, R. and Steckl, A.J., Appl. Phys. Lett. 73 (15), 2143 (1998).Google Scholar
12 Steckl, A. J., Garter, M., Birkhahn, R. and Scofield, J., Appl. Phys. Lett. 73 (17), 2450 (1998).Google Scholar
13 Garter, M., Scofield, J., Birkhahn, R. and Steckl, A. J., Appl. Phys. Lett. 74 (2), (1999).Google Scholar
14 Birkhahn, R., Garter, M. and Steckl, A. J.. Appl. Phys. Lett. to be published.Google Scholar
15 Gschneidner, K. A. and Eyring, L., Vol. 11-Two-Hundred-Year Impact of Rare Earths on Science, in Handbook on the Physics and Chemistry of Rare Earths North Holland Physics Publishing, New York, 1988.Google Scholar
16 Kingsley, J.D. and Aven, M., Phys. Rev. 155 (2), 235 (1967).Google Scholar
17 Brown, M.R., Cox, A.F.J., Shand, W.A. and Williams, J.M., J. Physics C: Solid State Physics 4, 1049 (1971).Google Scholar
18 Kobayashi, H., Tanaka, S. and Sasakura, H., Jpn. J. Appl. Phys. 12 (10), 1637 (1973).Google Scholar
19 Szczurek, I., Lozykowski, H.J. and Szczurek, T., J. Luminescence 23, 315 (1981).Google Scholar
20 Birkhahn, R., Hudgins, R., Lee, D., Steckl, A. J., Molnar, R. J. and Zavada, J. M., J. Vac. Sci. and Tech. B, to be published.Google Scholar
21 Colon, J. E., Elsaesser, D. W., Yeo, Y. K., Hengehold, R. L. and Pomrenke, G. S., Appl. Phys. Lett. 62 (2), 216 (1993).Google Scholar
22 Favennec, P. N., L'Haridon, H., Moutonnet, D., Salvi, M. and Gauneau, M., Jpn. J. Appl. Phys. 29 (4), L524 (1990).Google Scholar
23 Favennec, P.N., L'Haridon, H., Moutonnet, D., Salvi, M. and Gauneau, M., Mat. Res. Soc. Symp. Proc. 301, 181 (1993).Google Scholar
24 Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y. H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys. 70 (5), 2672 (1991).Google Scholar