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Optical Current DLTS with a Bipolar Rectangular Weighting Function for High-Resistivity Neutron Transmutation Doped Silicon

Published online by Cambridge University Press:  25 February 2011

Yutaka Tokuda  and
Akira Usami
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota, Aichi 470-03, Japan
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466, Japan
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Abstract

Defects in high-resistivity neutron transmutation doped (NTD) silicon without annealing were characterized by optical current DLTS with a bipolar rectangular weighting function using a GaAs LED. The DLTS method with a bipolar rectangular weighting function was also described. Two clear peaks labeled A and B were observed in addition to unresolved peaks due to overlaps of DLTS signals of several defects. The thermal emission activation energies of defects A and B were 0.15 and 0.50 eV, respectively. The DLTS signals of these defects were broader than the calculated ones. This indicates the clustered nature of defects produced by fast neutron irradiation. However, the fact that the characteristic peaks were observed suggests that the material state of high-resistivity NTD silicon is crystalline but not amorphous.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 349
Copyright
Copyright © Materials Research Society 1986

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