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Optical Imaging and Information Storage in Ion Implanted Ferroelectric Ceramics

Published online by Cambridge University Press:  15 February 2011

P. S. Peercy  and
C. E. Land
P. S. Peercy
Affiliation:
Sandia National Laboratories,† Albuquerque, New Mexico, 87185, USA
C. E. Land
Affiliation:
Sandia National Laboratories,† Albuquerque, New Mexico, 87185, USA
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Abstract

Photographic images can be stored in ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics using a novel photoferroelectric effect. These images are nonvolatile but erasable and can be switched from positive to negative by application of an electric field. We have found that the photosensitivity of ferroelectric PLZT is dramatically improved by ion implantation into the surface exposed to image light. For example, the intrinsic photosensitivity to near-UV light is increased by as much as four orders of magnitude by coimplantation with Ar and Ne. The increased photosensitivity results from implantation-induced decreases in dark conductivity and dielectric constant in the implanted layer. Furthermore, the increased photoferroelectric sensitivity has recently been extended from the near-UV to the visible spectrum by implants of Al and Cr. Ion-implanted PLZT is the most sensitive, nonvolatile, selectively-erasable image storage medium currently known.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 381
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

This work was performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789 and by the U.S. Army Research Office.

References

REFERENCES

1.Land, C. E. and Peercy, P. S., 1976 IEEE-SID Biennial Display Conf. Proc., 71 (1976).Google Scholar
2.Micheron, F., Ferroelectrics 12, 41 (1976).Google Scholar
3.Land, C. E. and Peercy, P. S., Ferroelectrics 22, 677 (1978).Google Scholar
4.Land, C. E., Optical Engrg. 17, 317 (1978).Google Scholar
5.Land, C. E. and Smith, W. D., Appl. Phys. Lett. 23, 57 (1973).Google Scholar
6.Micheron, F., Roachon, J. M. and Vergnolle, M., Ferroelectrics 10, 15 (1976).Google Scholar
7.Land, C. E. and Peercy, P. S., 1978 SID Int. Symp. Dig. of Tech. Papers 9, 14 (April, 1978).Google Scholar
8.Land, C. E. and Peercy, P. S, Appl. Phys. Lett. 37, 39 (1980).Google Scholar
9.Peercy, P. S. and Land, C. E., IEEE Trans. on Electr. Devices, ED– 28, 756 (1981).Google Scholar
10.Land, C. E., Ferroelectrics 7, 45 (1974).Google Scholar
11.Land, C. E., IEEE Trans. on Electron Devices ED– 26, 1143 (1979).Google Scholar
12.Peercy, P. S. and Land, C. E., Appl. Phys. Lett. 37, 815 (1980).Google Scholar
13.Brice, D. K., Rad. Eff. 6, 77 (1970);Google Scholar
13aJ. Appl. Phys. 46, 3385 (1975).Google Scholar
14.Dainty, J. C. and Shaw, R., Image Science (Academic Press, London, 1974), pp. 48-49.Google Scholar
15.Lipson, S. G. and Nisenson, P., Appl. Optics 13, 2052 (1978).Google Scholar
16.Micheron, F., Ferroelectrics 18, 153 (1978).Google Scholar