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Opto-Electronic Properties of Ge and Si Related Nanostructures on Ultrathin Si Oxide Covered Si Surfaces

Published online by Cambridge University Press:  01 February 2011

Masakazu Ichikawa ,
Yoshiaki Nakamura ,
Alexander Shklyaev  and
Norohito Fujinoki
Masakazu Ichikawa
Affiliation:
ichikawa@ap.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Physics, Tokyo, Japan
Yoshiaki Nakamura
Affiliation:
nakamura@ee.es.osaka-u.ac.jp, Osaka University, Department of System Innovation, Osaka, Japan
Alexander Shklyaev
Affiliation:
alexsan@mail.ru, The Insititute of Semiconductor Physics, Novosibirsk, Russian Federation
Norohito Fujinoki
Affiliation:
tt076529@mail.ecc.u-tokyo.ac.jp, University of Tokyo, Department of Applied Physics, Tokyo, Japan
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Abstract

We present a method to form semiconductor nanodots on Si substrates by using ultrathin Si oxide technology and the results on their opto-electronic properties. We can form ultra-small semiconductor nanodots with the size of ˜5nm and ultra-high density of ˜1012 cm−2 on Si surfaces covered with ultrathin SiO2 films of ˜0.3nm thickness. We focus on the Ge and GeSn nanodots on Si substrates and those embedded in Si films. These structures exhibit quantum confinement effects and intense luminescence in the energy region of about 0.8 eV.

Keywords

nanostructureoptoelectronicGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1145: Symposium MM – Application of Group IV Semiconductor Nanostructures , 2008 , 1145-MM05-06
Copyright
Copyright © Materials Research Society 2009

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References

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