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Organic Thin-Film-Transistors with High on/off Ratios

Published online by Cambridge University Press:  15 February 2011

L. Torsi ,
A. Dodabalapur ,
H. E. Katz ,
A. J. Lovinger  and
R. Ruel
L. Torsi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
A. Dodabalapur
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
H. E. Katz
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
A. J. Lovinger
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
R. Ruel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
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Abstract

In this article a new procedure to obtain alpha-hexathienylene (α-6T) thin-film-transistors (TFTs) with on/off ratios in excess of one million is reported. This procedure involves subjecting the TFTs to rapid thermal annealing. Previously, high on/off ratios have been achieved with improved device design and better chemical synthesis of α-6T oligomers. High on/off ratios, along with a switching time of ∼ 10 μs, render α-6T TFTs potential candidates as switching devices in active matrix displays. The experimental current-voltage (I-V) characteristics of oc-6T TFTs with channel length L = 4μm are also presented and a measured field effect mobility of 0.02 cm2/V-s is extracted from these characteristics using an analytical model which we have developed for short-channel α-6T TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 695
Copyright
Copyright © Materials Research Society 1995

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References

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