Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-22T01:35:08.054Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen-Trapping and Oxidation Induced by Laser Irradiation in Silicon

Published online by Cambridge University Press:  15 February 2011

Yung S. Liu ,
Shin-Wu Chiang  and
W. Katz
Yung S. Liu
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
Shin-Wu Chiang
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
W. Katz
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
Get access

Abstract

Rapid oxidation in silicon induced by nanosecond UV laser pulses has been recently reported [1]. A significant amount of oxygen was observed to be incorporated in theregrown silicon layer when irradiation took place in air or in oxygen ambient. The fundamental interaction and transport kinetics involved include: incorporation of impurity during surface melting, trapping of solute during resolidification, and rapid reaction to form chemical bonds. The present study has investigated the mechanism of oxygen incorporation and trapping under various regrowth conditions. Oxygen depth-concentration distributions were analyzed using secondary-ion-mass spectroscopy (SIMS). The oxide formed was studied using differential Fourier-Transformed IR (FT-IR) spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 249
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, Y.S., Chiang, S.W. and Bacon, F., Appl. Phys. Letts. 38, 1005 (1981).CrossRefGoogle Scholar
2. Liu, Y.S., Chiang, S.W. and Bacon, F., “Laser and Electron-Beam Solid Interactions and Material Processing,” in the Proc. of the Materials Research Society Annual Meeting, Vol. 1, Ed. by Gibbons, J.F., Hess, L.D. and Sigmon, T.W., North-Holland, New York (1981), p. 117.Google Scholar
3. Tsu, R., Hodgson, R.T., Tan, T.Y. and Baglin, J.E., Phys. Rev. Letts. 42, 1357 (1979).Google Scholar
4. Tempelhoff, K. and Spiegelberg, F., “Semiconductor Silicon 1977,” Proc. Vol. 77–2, The Electrochemical Society, Inc., (1977) p. 585.Google Scholar
5. Adams, A.C., Smith, T.E. and Chang, C.C., J. Elect. Soc. 127, 1787 (1980).Google Scholar
6. Chiang, S.W., Liu, Y.S. and Reihl, R.F., Appl. Phys. Letts. 39, 752 (1981).Google Scholar
7. Spaepen, F. and Turnbull, D., “Proc. of Laser-Solid Interactions and Laser Processing – 1978,” Ed. by Ferris, S.D., Leamy, H.J. and Paote, J.M., American Institute of Physics, NY, (1979) p. 73. Google Scholar
8. White, C.W., Wilson, S.R., Appleton, B.R. and Narayan, J., “Proc. of Laser and Electron- Beam Processing of Materials,” Ed. by White, C.W. and Peercy, P.S., Academic Press, NY, (1980) p. 124; also,CrossRefGoogle Scholar
8a. Baeri, P., Foti, G., Paote, J.M., Campisano, S.U., Rimini, E. and Cullis, A.G., “Laser- and Electron-Beam Solid Interactions and Materials Processing,” Ed. by Gibbons, J.F., Hess, L.D. and Sigmon, T.W., North-Holland, NY (1981) p. 6.Google Scholar
9. Jackson, K.A., Gilmer, G.H. and Leamy, H.J., “Laser and Electron Beam Processing of Materials,” Ed. by White, C.W. and Peercy, P.S., Academic Press, NY, (1980) p. 104.CrossRefGoogle Scholar