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P- and N-Type Microcrystalline SiC Fabricated by rf Plasma CVD with Ethane Gas

Published online by Cambridge University Press:  01 February 2011

T. Toyama ,
Y. Nakano ,
T. Kosuge ,
A. Asano  and
H. Okamoto
T. Toyama
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
Y. Nakano
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
T. Kosuge
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
A. Asano
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
H. Okamoto
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
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Abstract

We have been investigated p- and n-type microcrystalline Si1-xCx (μc-SiC) films fabricated by a conventional rf (13.56 MHz) plasma CVD method with a use of a new carbon source of C2H6 gas at a low substrate temperature on a glass substrate. The Si crystallites incorporated in μc-SiC films retain with a carbon content up to 9 at.%. Both of p- and n-type μc-SiC films show relative high dark conductivities of on the order of 10-3 S/cm with optical energy gaps, E04, of~2eV. In infrared spectra, any pronounced features due to C-Hn vibration mode are not found in C2H6-based μc-SiC films, which is different from the case of CH4-based μc-SiC films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A5.11
Copyright
Copyright © Materials Research Society 2003

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References

[1] Hattori, Y., Kruangam, D., Toyama, T., Okamoto, H., and Hamakawa, Y., J.Non-Cryst. Solids 97&98, 1079 (1987).Google Scholar
[2] Han, M.-K., Matsumoto, Y., Hirata, G., Okamoto, H., and Hamakawa, Y., J. Non-Cryst. Solids 115, 195 (1989).Google Scholar
[3] Kruangam, D., Toyama, T., Hattori, Y., Deguchi, M., Okamoto, H., and Hamakawa, Y., J. Non-Cryst. Solids 97&98, 293 (1987).Google Scholar
[4] Futagi, T., Katsuno, M., Ohtani, N., Ohta, Y., Mimura, H., and Kawamura, K., Appl. Phys. Lett, 58, 2948 (1991).Google Scholar
[5] Hanaki, K., Hattori, T., and Hamakawa, Y., Proc. of 3rd Intern. PVSEC (1987) p.49.Google Scholar
[6] Wang, C., Lucovsky, G., and Nemanich, R.J., J. Non-Cryst. Solids, 137&138, 741 (1991).Google Scholar
[7] Demichelis, F., Pirri, C.F., Tresso, E., J. Appl. Phys. 72, 1327 (1992).Google Scholar
[8] Wada, T., Kondo, M., and Matsuda, A.., Sol. Energy Mater. &Sol. Cells, 74, 533 (2002).Google Scholar
[9] Itoh, T., Fujiwara, T., Katoh, Y., Fukunaga, K., and Nonomura, S., J. Non-Cryst. Solids, 299–302, 880 (2002).Google Scholar
[10] Toyama, T., Matsui, T., Kurokawa, Y., Okamoto, H., and Hamakawa, Y., Appl. Phys. Lett. 69, 1261 (1996).Google Scholar
[11] Veprek, S., Iqbal, Z., Kuhne, K.O., Capezzuto, P., Sarrot, F.A., and Gimzewski, J.K., J Phys. C 16, 6241 (1983).Google Scholar
[12] Matsui, T., Tsukiji, M., Saika, H., Toyama, T., and Okamoto, H., Jpn. J. Appl. Phys. 41, 20 (2001).Google Scholar
[13] Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Izima, S., Matsumura, M., and Yamamoto, H., Jpn. J. Appl. Phys. 19, 1305 (1980).Google Scholar
[14] Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
[15] Wieder, H., Cardona, M., and Guarnieri, C.R., Phys. Stat. Sol. (b) 92, 99 (1979).Google Scholar
[16] Katayama, Y. and Shimada, T., Jpn. J. Appl. Phys. suppl. 19-2, 115 (1980).Google Scholar