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Parylene AF-4: A Low εR Material Candidate For ULSI Multilevel Interconnect Applications

Published online by Cambridge University Press:  15 February 2011

A.S. Harrus ,
M.A. Plano ,
D. Kumar  and
J. Kelly
A.S. Harrus
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, CA 95134
M.A. Plano
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, CA 95134
D. Kumar
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, CA 95134
J. Kelly
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, CA 95134
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Abstract

Parylene VIPTM AF-4 dielectric is a potential low εR candidate for ULSI manufacture. The search for new IMD materials with low dielectric constant (k ≤ 2.5) to enable sub 0.18 micron technologies is focusing on new polymers, deposited by either spinning or CVD methods. Two classes of requirements have to be satisfied for a material to be successful, i.e., used in volume device manufacturing. First, a set of physical characteristics have to be met, among the most important are thermal stability above 400 °C, mechanical stability, and good adhesion to a variety of substrates. Then, a second set of more stringent requirements have to be met related to device integration. For example, electrical performance in a device and dry etching for via formation. We report results on the evaluation of Parylene AF-4, deposited by vapor-deposition polymerization of tetrafluoro-p-xylylene. We present data on deposition characteristics, film composition and purity, thermal stability as well as preliminary electrical data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

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