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Phase Relationships and Phase Formation in the System BaF2-BaO-Y2O3-CuOx-H2O

Published online by Cambridge University Press:  18 March 2011

W. Wong-Ng ,
L. P. Cook ,
J. Suh ,
I. Levin ,
M. Vaudin ,
R. Feenstra  and
J. P. Cline
W. Wong-Ng
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
L. P. Cook
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
J. Suh
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
I. Levin
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
M. Vaudin
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
R. Feenstra
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, TN 37831, U.S.A.
J. P. Cline
Affiliation:
Ceramics Division, National Institute of Standards and Technology Gaithersburg, MD 20899, U.S.A
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Abstract

The interplay of melting equilibria and reaction kinetics is important during formation of the Ba2YCu3O6+x (Y-213) phase from starting materials in the quaternary reciprocal system Ba,Y,Cu//O,F. For experimental investigation of the process we used a combination of differential thermal analysis (DTA) for study of melting equilibria, and in-situ high-temperature x-ray diffraction (HTXRD) for study of the phase formation and reaction kinetics. DTA investigation of compositions spaced along compositional vectors extending from the oxide end to the fluoride end of the reciprocal system have given evidence of low melting liquids (∼600 °C) near the fluorine-rich end. Work is continuing to determine whether similar thermal events observed in the interior of the system also indicate low temperature liquids, and on the extent to which low-melting liquids could be involved in Y-213 phase formation. HTXRD investigations have been initiated on the conversion of 0.3 μm and 1.0 μm thick BaF2-Y-Cu precursor films to Y-213 in the presence of water vapor. Preliminary results indicated that the thickness of film has a strong influence on the texture of the Y-213 film: a 0.3 μm film showed mainly (001) texture, whereas a 1.0 μm film showed a greater volume fraction of (h00) texture. While the HTXRD method cannot directly reveal the presence of liquid, we are working to combine DTA and HTXRD data for a unified picture of Y-213 phase formation during the “BaF2 ex-situ” process for coated-conductor fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 689: Symposium E – Materials for High-Temperature Superconductor Technologies , 2001 , E9.7
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Feenstra, R., Lindemer, T. B., Budai, J. D., and Galloway, M. D., J. Appl. Phys. 69, 6569 (1991).Google Scholar
2. Mankiewich, P.M., Scofield, J.H., Skocpol, W.J., Howard, R.E., Dayem, A.H., and Good, E., Appl. Phys. Lett. 51 (21) 1753 (1987).Google Scholar
3. Gupta, A., Jagannathan, R., Cooper, E.I., Giess, E.A., Landman, J.I., and Hussey, B.W., Appl. Phys. Lett. 52 (24), 2077 (1988).Google Scholar
4. Chan, S.-W., Bagley, B.G., Greene, L.H., Giroud, M., Feldmann, W.L., IIJenkin, K.R., and Wilkins, B.J., Appl. Phys. Lett. 53 (15) 1443 (1988).Google Scholar
5. McIntyre, P.C. and Cima, M., J. Mater Res. 5, 4183 (1990).Google Scholar
6. McIntyre, P.C., Cima, M. J., and Roshko, A., J. Appl. Phys. 77 (10) 5263 (1995).Google Scholar
7. McIntyre, P.C., Cima, M. J., Smith, J.A. Jr., Hallock, R.B., Siegal, M.P., and Phillips, J.M., J. Appl. Phys. 71 1868 (1992).Google Scholar
8. Feenstra, R., US Patent 5,972,847 (1999).Google Scholar
9. Solovyov, V.F. and Suenaga, M., Physica C 309, 269 (1998).Google Scholar
10. Lee, D.F., DOE Peer Review, Washington DC, July, 2000.Google Scholar
11. Wu, L., Zhu, Y., Solovyov, V.F., Weismann, H.J., Moodenbaugh, A.R., Sabatini, R.L., and Suenaga, M., in press, 2001.Google Scholar
12. McIntyre, P.C., Cima, M. J., J. Mater. Res. 9 2219 (1994).Google Scholar
13. Cook, L.P., Wong-Ng, W. and Suh, J. in High-Temperature Superconductors – Crystal Chemistry, Processing and Properties, edited by Balachandran, U., Freyhardt, H.C., Izumi, T., and Labalestier, D.C. (Mater. Res. Soc. Proc. 659, Pittsburg, PA, 2001) pp. II4.8.1 (2001).Google Scholar
14. Wong-Ng, W. and Cook, L. P., J. Res. Natl. Inst. Stand. Technol. 103, 379 (1998).Google Scholar
15. Samouel, M., C.R. Acad.Sci. Ser. C 270 [22] 1805 (1970).Google Scholar